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[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS

The diffusion layer structure of SiC devices can be visualized (high-sensitivity evaluation of the diffusion layer structure).

In SNDM (Scanning Nonlinear Dielectric Microscopy), it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method encompasses the functions of the traditionally used SCM (Scanning Capacitance Microscopy), allowing for sufficient evaluation of next-generation power devices, such as SiC, which are difficult to assess with SCM, from low to high concentrations. It is characterized by high sensitivity and can be applied to all compound semiconductor devices. As an example, we will introduce a case where a cross-section of a SiC Planer Power MOS was fabricated and analyzed using SNDM.

• Company：一般財団法人材料科学技術振興財団　MST
• Price：Other

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